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ICP Etching Equipmentの製品一覧

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ICP-RIE『SI 500』

ICP-RIE『SI 500』

High-selectivity etching! Optimization of radical supply by adjusting the spacing between the ICP source and the substrate electrode.

The "SI 500" is an ICP-RIE that controls ion density through ICP power. It achieves a high etch rate with a high plasma density of 10^12 [ions/cm3] using the unique PTSA200ICP source. Additionally, it features low-damage etching through control of ion energy via bias power. 【Features】 ■ Control of ion density through ICP power ■ Control of ion energy through bias power ■ Optimization of radical supply by adjusting the distance between the ICP source and the substrate electrode ■ Low-damage etching ■ High selectivity etching *For more details, please refer to the PDF document or feel free to contact us.

  • Other semiconductor manufacturing equipment
  • ICP Etching Equipment

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ICP etching equipment for compound semiconductor processes

ICP etching equipment for compound semiconductor processes

ICP etching equipment for compound semiconductor processes

The RIE-330iPC is a multi-wafer processing etching device for compound semiconductor processes that employs an inductively coupled plasma (ICP) discharge method. 【Features】 ○ Compatible with large trays of Φ330mm Up to 27 pieces for Φ2-inch wafers, 17 pieces for Φ2.5-inch wafers, 12 pieces for Φ3-inch wafers, 7 pieces for Φ4-inch wafers, and 3 pieces for Φ6-inch wafers can be processed simultaneously. ○ By adopting the new SSTC (Symmetrical Shielded Tornado Coil) electrode as the ICP source, it enables high selectivity and excellent uniformity in etching over large areas. ○ Allows for low-damage processes at low bias (below -100V). ○ Stable etching conditions can be achieved through temperature control of the substrate stage and the inner walls of the reaction chamber. ○ A turbo molecular pump is also used in the load lock chamber, providing a more stable process.

  • Etching Equipment
  • Wafer processing/polishing equipment
  • ICP Etching Equipment

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ICP etching equipment RIE-800iPC/RIE-400iPC

ICP etching equipment RIE-800iPC/RIE-400iPC

Introducing a full-scale production device equipped with a vacuum cassette chamber, offering excellent process reproducibility and stability.

The "RIE-800iPC/RIE-400iPC" is an ICP etching device that boasts stability for continuous processing of 25 SiC trench-shaped wafers. It can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity. Additionally, by adopting an exhaust system directly connected to the reaction chamber, it realizes a wide process window from low flow and low pressure to high flow and high pressure. 【Features】 <RIE-800iPC> ■ Supports maximum Φ8” wafers ■ Uses inductively coupled plasma for discharge ■ Equipped with a vacuum cassette chamber, excelling in process reproducibility and stability ■ Optimizes the distance between the wafer and plasma to ensure good in-plane uniformity ■ Integrates TMP (Turbo Molecular Pump) and high-frequency power supply for easy replacement *For more details, please refer to the PDF document or feel free to contact us.

  • Etching Equipment
  • ICP Etching Equipment

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